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| MCC Features * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBTA42 Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation C Pin Configuration Top View NPN Silicon High Voltage Transistor SOT-23 A D 1D B E Min 300 300 6.0 0.1 0.1 Max Units Vdc Vdc Vdc uAdc uAdc G H J F E C B Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=100Adc, IE=0) Emitter-Base Breakdown Voltage (I E=100Adc, IC=0) Collector Cutoff Current (VCB=200Vdc, IE=0) Emitter Cutoff Current (VEB=6.0Vdc, IC=0) DC Current Gain* (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=30mAdc, VCE=10Vdc) VCE(sat) Collector-Emitter Saturation Voltage (I C=20mAdc, IB=2.0mAdc) Base-Emitter Saturation Voltage (I C=20mAdc, IB=2.0mAdc) 25 40 40 OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ON CHARACTERISTICS hFE K DIMENSIONS ---- 0.5 Vdc VBE(sat) 0.9 Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccb Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Collector-Emitter Capacitance (VCB=20Vdec, IE=0, f=1.0MHz) 50 3.0 MHz pF DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature *Pulse Width 300s, Duty Cycle 2.0% Symbol PD Max 225 1.8 Unit mW mW/C C/W mW mW/C C/W C RqJA PD 556 300 2.4 .037 .950 .037 .950 RqJA TJ, Tstg 417 -55 to +150 www.mccsemi.com MMBTA42 120 100 hFE , DC CURRENT GAIN 80 60 40 20 0 25C TJ = +125C MCC VCE = 10 Vdc -55C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Ceb @ 1MHz C, CAPACITANCE (pF) 10 BANDWIDTH (MHz) f T, CURRENT-GAIN 100 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25C VCE = 20 V f = 20 MHz 50 70 100 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current-Gain - Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V Figure 4. "ON" Voltages www.mccsemi.com |
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